Anodic Oxidation of Silicon in KNO[sub 3]-N-Methylacetamide Solution: Interface Properties

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Abstract
Silicon was oxidized anodically using constant current and/or constant voltage methods. The interface was investigated with the MOS capacitance method. Constant current anodization results in a high density of surface states. Constant voltage anodization leads to surface state densities that roughly decrease with the final oxidation rate. Short time annealing in He at elevated temperatures removes the states from the Si forbidden band and reduces the density at zero Si surface potential to , Positive and negative bias tests at 300 °C showed a small positive ion migration effect but no interface instability.

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