Room-temperature, continuous-wave operation for mode-stabilised AlGaInP visible-light semiconductor laser with a multiquantum-well active layer

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Abstract
646 nm continuous-wave operation at room temperature (25°C) has been achieved by a transverse mode stabilised AlGaInP laser diode with a (multi-)quantum-well structure. The laser structure was grown by metalorganic vapour phase epitaxy. The threshold current (density) is 55 mA (4.4 kA/cm2) and maximum light output power is 19 mW. Stable fundamental transverse-mode operation was obtained, at least up to 15mW.