Irradiation temperature dependence of production efficiency of defects induced in neutron-irradiated silicon carbides
- 2 May 2000
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 166-167, 399-403
- https://doi.org/10.1016/s0168-583x(99)01182-9
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education (C-2-09680480)
This publication has 9 references indexed in Scilit:
- Radiation induced defects in CVD-grown 3C-SiCIEEE Transactions on Nuclear Science, 1990
- Electron spin resonance in electron-irradiated 3C-SiCJournal of Applied Physics, 1989
- The need for improved temperature control during reactor irradiationJournal of Nuclear Materials, 1988
- Radiation effects and damage mechanisms in ceramic insulators and window materialsJournal of Nuclear Materials, 1988
- Molecular dynamic calculations of energetic displacement cascadesJournal of Nuclear Materials, 1981
- Defect Creation by Radiation in Polar CrystalsPublished by Springer Nature ,1972
- Temperature dependence of F-centre production in KClSolid State Communications, 1966
- The Displacement of Atoms in Solids by RadiationReports on Progress in Physics, 1955
- Über Erregung und Entfärbung lichtelektrisch leitender AlkalihalogenideThe European Physical Journal A, 1930