Stoichiometry dependence of electrical activation efficiency in Si implanted layers of undoped, semi-insulating GaAs

Publisher Website
Google Scholar
Abstract
Stoichiometry dependences of the electrical activation efficiency in Si implanted layers have been investigated for undoped, semi‐insulating (SI) liquid encapsulated Czochralski (LEC) GaAs grown from melts of different compositions. The absolute value of lattice parameter was used as a measure for deviation from stoichiometry in GaAs. Irrespective of the annealing procedures, the electrical activation efficiency tends to increase and saturate to a maximum value as the crystals become As‐rich, i.e., the lattice parameter increases from 0.565358 to 0.565364 nm. These results demonstrate that the precise control of stoichiometry greatly improves the reproducibility of LEC growth of undoped SI GaAs suitable for GaAs integrated circuits.