The effect of uniaxial tensile stress on impurity conduction in germanium
- 1 January 1959
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 8, 257-259
- https://doi.org/10.1016/0022-3697(59)90329-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Resistivity and hall coefficient of antimony-doped germanium at low temperaturesJournal of Physics and Chemistry of Solids, 1958
- Temperature Dependence of the Piezoresistance of High-Purity Silicon and GermaniumPhysical Review B, 1957
- Shallow Impurity States in Silicon and GermaniumPublished by Elsevier ,1957
- Theory of Transport Effects in Semiconductors: ThermoelectricityPhysical Review B, 1956
- Broadening of Impurity Levels in SiliconPhysical Review B, 1955
- Piezoresistance Effect in Germanium and SiliconPhysical Review B, 1954