Highly reliable 685-nm 50-mW visible lasers with Zn-diffused windows

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Abstract
High-power, highly reliable 685 nm Zn-diffused type window structure laser diodes (LDs) are developed using 3-inch (phi) wafers. The lasers have exhibited over 7000 hours operation under the condition of 60 degrees Celsius, 50 mW. In addition, over 4000 hours operation under the condition of 60 degrees Celsius, 60 mW is also achieved. These LDs are fabricated by well controlled 3-inch full wafer processing. The window regions near both facets consist of the disordered GaInP wells formed by an open-tube solid-phase Zn-diffusion technique. It is confirmed that highly uniform characteristics are achieved over the 3-inch wafer. Moreover, low astigmatic distances of less than 3 micrometer m are obtained in the range of 3 - 50 mW in spite of the window structure.

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