Spiral growth of GaSb on (001) GaAs using molecular beam epitaxy
- 23 January 1995
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (4) , 463-465
- https://doi.org/10.1063/1.114057
Abstract
Atomic force microscopy is employed to obtain images of the surface of GaSb epilayers grown on (001) GaAs using molecular beam epitaxy. The images reveal a surface that consists of micron size mounds that are approximately 4 nm high. A stepped surface is clearly observed on the mounds with a single step edge that originates from a screw dislocation at the center of the mound and moves out to the edge in a spiral fashion. The surface structure of the spiral mounds is observed to depend on the growth temperature of the GaSb epilayer, presumably as a result of a shorter diffusion length of the group III adatoms for lower substrate temperatures.Keywords
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