Space charge conduction in presence of a gauss ian distribution of localized states
- 1 December 1973
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 28 (6) , 1265-1277
- https://doi.org/10.1080/14786437308227998
Abstract
In semiconductors, the d.c. conduction is strongly influenced by the trap distribution in the band gap. The authors, assuming a gaussian trap distribution, calculate the current-voltage characteristics in space-charge-limited conduction. This theoretical model, applied to amorphous selenium, shows that such a distribution exists in the band gap of this material and is defined by Some small experimental discrepancies at high fields are also explained.Keywords
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