Elastic behavior under pressure of semiconducting SmS

Abstract
From ultrasonic wave velocity measurements the hydrostatic pressure dependences of the second-order elastic constants of the semiconducting form of SmS have been obtained up to 6×108 Pa—just below the pressure (6.5×108 Pa) at which the isostructural first-order phase transition takes place. The major objectives have been to assess how the elastic behavior and the interatomic forces in SmS alter as the phase transition is approached. The results are compared and contrasted with those of TmSe0.32 Te0.68, which also undergoes an isostructural transition but of closely second-order character. An isostructural volume collapse is associated with the identical irreducible representation η0(=η11+η22+η33) and consequently bulk modulus instability. As SmS approaches the transition from the semiconducting side, its bulk modulus does decrease under pressure above about 3×108 Pa but not to a great extent. This behavior is in contrast with that of TmSe0.32 Te0.68 whose bulk modulus decreases continuously under pressure to a small value at the transition. The elastic constant C12 reduces rapidly with pressure above about 3×108 Pa but, unlike that in TmSe0.32 Te0.68, does not go through zero before the transition pressure is reached. C11 softens somewhat at high pressure, but C44 and 12(C11C12) show pressure dependences typical of rocksalt-structure crystals. The third-order elastic constants at atmospheric pressure have also been measured. Much of the largest third-order elastic constant is C111, for which the nearest-neighbor repulsive forces are largely responsible. The anisotropy of the acoustic-mode Grüneisen γ parameters in the long-wavelength limit is explicable in terms of the strong influence of the nearest-neighbor repulsive forces on the third-order elastic constant C111. At a pressure of 6×108 Pa (just below Pt), C11P=6.3, C12P=22.8, and BP=17.3—anomalous pressure...