Evidence of p/n homojunction formation in Zn3P2
- 15 September 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (6) , 567-569
- https://doi.org/10.1063/1.91786
Abstract
Heating of magnesium/p‐Zn3P2 contacts at 100 °C results in a ∼ 102 lower reverse saturation current than found for the unheated metal‐semiconductor diode. Spectral response and electron‐beam‐induced current (EBIC) measurements show the formation of a buried junction upon heating, and the latter method has been used to obtain values of junction depth and minority carrier diffusion length. A model expressing the collection efficiency of an n‐on‐p homojunction shows good agreement with experiment when the minority carrier diffusion lengths and junction depth determined by EBIC measurements are used. This is the first evidence that p/n homojunctions may be formed in Zn3P2.Keywords
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