Epitaxial CeO2 buffer layers for YBa2Cu3O7−δ films on sapphire
- 15 August 1993
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (4) , 2942-2944
- https://doi.org/10.1063/1.354650
Abstract
Epitaxial CeO2 buffer layers and YBa2Cu3O7−δ thin films have been grown in situ on (11̄02) sapphire by electron beam evaporation. Buffer layers of only 20 nm thickness inhibit interdiffusion between YBa2Cu3O7−δ and Al2O3 as determined by depth profiling using x‐ray photoelectron spectroscopy. The layers show smooth surfaces and narrow interfaces. High lattice perfection of the CeO2 layer has been shown by x‐ray diffraction. Laue oscillations up to ninth order have been observed in thin CeO2 buffer layers on sapphire. We found only one epitaxial orientation with YBa2Cu3O7−δ (001) ∥ CeO2 (001) ∥ Al2O3 (11̄02) and YBa2Cu3O7−δ [110] ∥ CeO2 [100] ∥ Al2O3 [112̄0]. YBa2Cu3O7−δ films grown on these buffer layers reveal Tc=88±0.5 K, ρ(300 K)=380 μΩ cm, and jc(77 K, 0 T)=1.3×106 A/cm2.This publication has 11 references indexed in Scilit:
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