Electrical Properties of Thin Films of Amorphous ABO3-Type Materials
- 1 January 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (S2)
- https://doi.org/10.7567/jjaps.22s2.31
Abstract
Thin films of amorphous PbTiO3 and LiNbO3 were prepared by RF-sputtering deposition on cooled substrates and their electrical properties were studied. The amorphous LiNbO3 film showed high dielectric constant (ε>103) in high temperature region for low frequency measurement. The temperature dependence of dielectric constant can be explained by Debye-type dielectric relaxation. The amorphous PbTiO3 film was certified to contain Pb crystallites and exhibit high surface electrical conductivity (σs\gtrsim10 (Ω· cm)-1). This phenomena disappeared after an annealing above 220°C.Keywords
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