AlGaAs/GaAs HBT with GaInAs cap layer fabricated by multiple-self-alignment process using one mask
- 27 April 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (9) , 610-612
- https://doi.org/10.1049/el:19890415
Abstract
An AlGaAs/GaAs HBT has been fabricated by introducing an n+-GaInAs cap layer to reduce the emitter contact resistivity and optimising a multiple self-alignment process using one mask. The HBT has a good high-frequency performance of fT= 82GHz and fmax= 120GHzKeywords
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