Encapsulant-free annealing of ion-implanted GaP
- 15 April 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (8) , 323-324
- https://doi.org/10.1049/el:19820220
Abstract
GaP diodes were fabricated by Mg+ implantation and controlled atmosphere annealing. At room temperature, these diodes emit green light under forward bias, with an ideality factor of 2.0. Reverse breakdown voltages are 180 V, with a measured reverse leakage current density of 4.8 × 10−9 A/cm2 at a bias of −3 V. The diodes retain good electrical characteristics at 400°C.Keywords
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