Ultra-low contact resistance for deca-nm MOSFETs by laser annealing
- 1 January 1999
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 931-933
- https://doi.org/10.1109/iedm.1999.824302
Abstract
We demonstrate an ultra-low contact resistance of 4/spl times/10/sup -8/ /spl Omega/-cm/sup 2/ (5/spl times/ lower than RTA) using a laser annealing (LA) process. The contact resistance reduction is attributed to the high activated dopant concentration of 10/sup 21/ cm/sup -3/. For the first time, we have successfully fabricated LA-pMOSFETs with a conventional CMOS integration flow for lowering contact resistance.Keywords
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