Characteristics & Reliability of 100A Oxides
- 1 April 1984
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 07350791,p. 152-155
- https://doi.org/10.1109/irps.1984.362035
Abstract
The electrical characteristics and the long term reliability of 100Å silicon dioxide films is examined in detail. In this paper the initial "as grown" properties are presented and the effects of subsequent process steps are discussed. The long term reliability of 100Å oxide having undergone a full double level polysilicon process is examined. An activation energy of 0.3eV was found and electric field acceleration was determined to be 100/MV/cm.Keywords
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