Effect of electron-electron interactions on microwave performance of IMPATT GaAs diodes
- 2 September 1976
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 12 (18) , 460-462
- https://doi.org/10.1049/el:19760349
Abstract
The effect of electron-electron interactions on the ionisation rate is investigated. It is shown that this effect may be a power and efficiency saturation phenomenon for GaAs IMPATT diodes. This effect may become drastic if too high current densities are used, and this particularly may be the case in the millimetric frequency range.Keywords
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