High‐Temperature Equilibrium Carrier Density of Arsenic‐Doped Silicon

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Abstract
Chemical vapor deposition (CVD) of the superconducting phase from the halide precursors , and , where , was thermodynamically investigated. The oxygen source was , , or a mixture of . The effect of different deposition parameters on the yield of the phase was studied and the results are summarized in calculated CVD stability diagrams. The choice of metal halide was found to affect the phase stability of to a large extent. The best conditions were obtained by using exclusively iodides as metal precursors and with as the oxygen source. For a total pressure of 10 kPa, can be deposited with 100% yield for all values of the molar ratio between 100 and 106, if the temperature is below 900°C. If chlorides are used as metal precursors, the presence of is found to be necessary in order to deposit the superconducting phase.

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