Dual ion beam deposition of oxide, nitride, and carbide films

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Abstract
Compound films such as oxides, nitrides, and carbides have been prepared in a dual ion beam (DIB) deposition system, which contains an ionized cluster beam (ICB) source and an ionized gas beam (IGB) source. The characteristic of the DIB system and the properties of compound films such as SiOx, TiNx, and C were investigated. The ion current density distribution was measured at acceleration voltages from 0 to 10 kV by an array of Faraday cups at the substrate position. Uniform ion current distributions over 5-in. diam substrates have been obtained for ICB of Au, Cu, and Si and IGB of CH4, N2, and O2. The composition of SiOx films prepared by DIB approaches stoichiometric SiO2 with increasing oxygen ion current density. The crystalline structure of TiNx films changes gradually from TiN to Ti2N as the atomic flux ratio of (N/Ti) decreases. The Knoop hardness values of TiN and C films prepared at 200 °C are over 1700 and 3000 kg/mm2, respectively. Therefore the advantages of using the DIB deposition system for low-temperature compound film growth include control over film composition and crystalline structure with excellent physical properties. Ion irradiation during film growth by both metal and gas beams enhances chemical reaction kinetics on the substrate.
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