Characterization of ion-sensitive layer systems with a C( V) measurement method operating at constant capacitance
- 1 January 1990
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 1 (1-6) , 354-356
- https://doi.org/10.1016/0925-4005(90)80229-s
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Time effects of ion-sensitive field-effect transistorsSensors and Actuators, 1989
- The influence of the pH on the electrolyte-SiO2-Si system studied by ion-sensitive fet measurements and quasi-static C-V measurementsThin Solid Films, 1980
- Characterization, Control, and Use of Dielectric Charge Effects in Silicon TechnologyJournal of Vacuum Science and Technology, 1969
- Ideal MOS Curves for SiliconBell System Technical Journal, 1966
- The effects of oxide traps on the MOS capacitanceIEEE Transactions on Electron Devices, 1965