Arbitrary doping profiles produced by Sb-doped Si MBE
- 1 October 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (7) , 654-656
- https://doi.org/10.1063/1.90453
Abstract
Arbitrary doping profiles with abrupt transitions have been produced in n‐type Si MBE films. Changes in doping level were produced with a resolution unattainable by CVD growth and at depths inaccessible to ion implantation. It was found, however, that films must be grown above ∼850 °C. Below that temperature doping profiles were distorted and Sb segregated strongly on the sample surface.Keywords
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