Pressure dependence of Schottky barrier height at the Pt/GaAs interface
- 12 September 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (11) , 974-976
- https://doi.org/10.1063/1.100045
Abstract
The Schottky barrier height at the Pt/GaAs interface has been measured as a function of pressure using a diamond anvil cell. The Schottky barrier height was found to shift to higher energy with a linear pressure coefficient of 11 meV/kbar, which is equal to the pressure coefficient of the fundamental gap of GaAs and with a nonlinear coefficient of −0.26 meV/kbar2. These results are discussed in terms of defect models which have been proposed to explain the Fermi level pinning in Schottky barriers.Keywords
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