Electrical Properties of Mo/III-V Compounds Schottky Barriers
- 1 January 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (S1)
- https://doi.org/10.7567/jjaps.22s1.397
Abstract
0.1 µm Mo layers are deposited on III-V compounds by electron-beam evaporation. The electrical properties and interface of Schottky barriers are assessed by I-V, C-V, DLTS and Rutherford Backscattering (2 MeV He+, θ=160°). The near-ideal Schottky diodes (nE v+(0.93±0.04) eV is observed in the Mo/GaAs (undoped) system and attributed to the native defects of bulk GaAs. The thermal stability of Mo/GaAs Schottky barrier is greater than that of Mo/GaAs0.6P0.4, and the Mo/GaAs Schottky barrier can be used in high power IMPATT and MESFET devices.Keywords
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