Metal Complexes for Preparing Ferroelectric Thin Films by Metalorganic Chemical Vapor Deposition
- 1 September 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (9S) , 2992-2994
- https://doi.org/10.1143/jjap.31.2992
Abstract
Recently, metal β-diketonato complexes have been used as a gas source for preparing ferroelectric thin films by metalorganic chemical vapor deposition (MOCVD). Since we have synthesized highly purified metal dipivaloylmethanato (DPM) complexes such as Pb(DPM)2, Sr(DPM)2 and Ba(DPM)2 for ferroelectric thin films, we have investigated several properties of these chelate compounds related to depositing thin films. Their volatility and toxicity have also been investigated. As a result, it has been found that these chelate compounds have low vapor pressure, but present the advantages of easy handling because of the low toxicity and the possibility of forming thin films at lower temperature.Keywords
This publication has 3 references indexed in Scilit:
- Preparation and electrical properties of MOCVD-deposited PZT thin filmsJournal of Applied Physics, 1991
- Preparation of BaTiO3 Films by CVDJournal of the Ceramic Society of Japan, 1991
- Growth of Epitaxial PLZT Film by CVDJournal of the Ceramic Society of Japan, 1991