Compatible High and Low Voltage CMOS Devices Using SIMOX Technology
- 1 January 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (S1)
- https://doi.org/10.7567/jjaps.22s1.85
Abstract
New type high and low voltage CMOS buried channel devices are described, which are applied to a current mirror and an operational amplifier using SIMOX technology. In the MOS current mirrors, a 0.5% matching error rate was obtained in a 10 µA drain current without any compensation circuits. In the two stage operational amplifier, an open loop voltage gain of 60 dB was obtained with a ±5 V supply.Keywords
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