GaAs-AlAs monolithic microresonator arrays
- 13 July 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (2) , 94-96
- https://doi.org/10.1063/1.98607
Abstract
Monolithic optical logic devices 1.5–5 μm across are defined by ion-beam assisted etching through a GaAs/AlAs Fabry–Perot structure grown by molecular beam epitaxy. They show reduced energy requirements (more than an order of magnitude smaller than the unetched heterostructure), uniform response over small arrays, negligible crosstalk at 3 μm center-center spacing, ∼150 ps recovery time, and thermal stability at 82 MHz operating frequency. All experiments were performed at room temperature.Keywords
This publication has 8 references indexed in Scilit:
- Speed and effectiveness of windowless GaAs étalons as optical logic gatesApplied Physics Letters, 1986
- Parallel operation and crosstalk measurements in GaAs étalon optical logic devicesApplied Physics Letters, 1986
- Streak-camera observation of 200-ps recovery of an optical gate in a windowless GaAs étalon arrayApplied Physics Letters, 1986
- 3-pJ, 82-MHz optical logic gates in a room-temperature GaAs-AlGaAs multiple-quantum-well étalonApplied Physics Letters, 1985
- Optical Logic-in the Light of Computer TechnologyOptica Acta: International Journal of Optics, 1985
- Fabrication of GaAs bistable optical devicesMaterials Letters, 1983
- On the Physical Limits of Digital Optical Switching and Logic ElementsBell System Technical Journal, 1982
- Physics of optical switchingPhysical Review A, 1982