Photochemical oxidation of (Hg, Cd)Te: Passivation processes and characteristics

1 January 1985

journal article
Published by American Vacuum Society in Journal of Vacuum Science & Technology A

Vol. 3 (1) , 195-198
https://doi.org/10.1116/1.573199

Abstract

We have demonstrated the controlled growth of photochemical native oxide on (Hg, Cd)Te by the UV photodissociation of N2O. The initial growth rate is ∼7Å/min, is insensitive to temperature over the range from 40 to 100 °C, and is dependent on the surface Hg concentration. Encapsulation of the native oxide with photochemical SiO2 results in a degradation of the (Hg, Cd)Te–native oxide interface electrical properties. The presence of photochemical HgO between the native oxide and SiO2 results in superior (Hg, Cd)Te surface electronic properties. However, MOS structures comprising SiO2 on a double layer of HgO on photochemical native oxide undergo an electrical degradation at room temperature, likely owing to reactions between HgO and the native oxide or (Hg, Cd)Te substrate.

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