Bandgap and interface engineering for advanced electronic and photonic devices
- 1 August 1992
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 216 (1) , 59-67
- https://doi.org/10.1016/0040-6090(92)90870-h
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Impact ionization in the base of a hot-electron AlSb/InAs bipolar transistorApplied Physics Letters, 1990
- Impact ionization rates in an InGaAs/InAlAs superlatticeApplied Physics Letters, 1989
- Subpicosecond InP/InGaAs heterostructure bipolar transistorsIEEE Electron Device Letters, 1989
- Dependence of the GaAs/AlGaAs superlattice ionization rate on Al contentApplied Physics Letters, 1989
- Band-Gap Engineering: From Physics and Materials to New Semiconductor DevicesScience, 1987
- Compositionally Graded Semiconductors and Their Device ApplicationsAnnual Review of Materials Science, 1986
- Band-gap engineering via graded gap, superlattice, and periodic doping structures: Applications to novel photodetectors and other devicesJournal of Vacuum Science & Technology B, 1983
- Staircase solid-state photomultipliers and avalanche photodiodes with enhanced ionization rates ratioIEEE Transactions on Electron Devices, 1983
- Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratioApplied Physics Letters, 1982
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974