TEM observation of dislocation loops correlated with individual swirl defects in as-grown silicon
- 1 September 1974
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (5) , 277-279
- https://doi.org/10.1063/1.1655471
Abstract
Swirl defects in as-grown silicon single crystals could be observed directly in a transmission electron microscope after application of a special sample preparation method. Complicated dislocation loops were found at positions of individual swirl defects which had been revealed as hillocks rather than as etch pits by a modified Sirtl etch.Keywords
This publication has 3 references indexed in Scilit:
- Recent observations on „swirl defects” in dislocation-free siliconPhysica Status Solidi (a), 1973
- VACANCY CLUSTERS IN DISLOCATION-FREE SILICONApplied Physics Letters, 1970
- 無転位シリコン単結晶中の点状欠陥Denki Kagaku oyobi Kogyo Butsuri Kagaku, 1967