Electronic states of florinated amorphous silicon
- 29 February 1980
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 35-36, 61-66
- https://doi.org/10.1016/0022-3093(80)90572-4
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Theoretical Studies of Electronic States Produced by Hydrogenation of Amorphous SiliconPhysical Review Letters, 1979
- A new amorphous silicon-based alloy for electronic applicationsNature, 1978
- Theory of valence-band Auger spectra: GaAs(110)Physical Review B, 1977
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977
- The valence electron spectrum of SiF4Chemical Physics Letters, 1977
- Electronic energy structure of amorphous siliconPhysical Review B, 1976
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- Photoelectron spectra of halides: VII. Variable temperature He(I) and He(II) studies of CF4, SiF4 and GeF4Journal of Electron Spectroscopy and Related Phenomena, 1975
- Valence electron binding energies of some silicon compounds from x-ray photoelectron spectroscopyJournal of Electron Spectroscopy and Related Phenomena, 1974
- Photoelectron Spectra of Methane, Silane, Germane, Methyl Fluoride, Difluoromethane, and TrifluoromethaneThe Journal of Chemical Physics, 1970