Mobility, transit time and transconductance in submicrometre-gate-length m.e.s.f.e.t.s

4 January 1979

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 15 (1) , 26-28
https://doi.org/10.1049/el:19790020

Abstract

Two-dimensional simulations of submicrometre-gate-length m.e.s.f.e.t.s of Si, GaAs and InP show that device transit time and transconductance depend more on high-field diffusion constant and the shape of the velocity/field characteristic than on low-field mobility. Reasonable InP devices have shorter transit times and higher transconductances than GaAs devices, and for certain device parameters these figures of merit can be almost the same for Si and GaAs devices.

Keywords

TRANSIT TIME
TWO DIMENSIONAL SIMULATION
CARRIER MOBILITY
GAAS
TRANSCONDUCTANCE
INP
SUB MICRON GATE LENGTH MESFETS

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