Contributions of Oxygen, Silicon, and Hydrogen to the Interface States of an Si ‐ SiO2, Interface
- 1 June 1974
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 121 (6) , 784-787
- https://doi.org/10.1149/1.2401918
Abstract
Oxygen, silicon, and hydrogen ions are implanted with doses of 10 10 − 10 15 / cm 2 through the oxide of a MOS structure. The development of induced levels in Si can be observed. Annealing experiments from room temperature to 800°C show the transition from the nonequilibrium incorporation to the initial (nonimplanted) state. Hydrogen implantation hinders the restoration of a Si ‐ SiO 2 interface under H2 annealing.Keywords
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