Electrical characteristics of amorphous iron-tungsten contacts on silicon
- 1 June 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (11) , 987-989
- https://doi.org/10.1063/1.93824
Abstract
The electrical characteristics of amorphous Fe-W contacts have been determined on both p-type and n-type silicon. The amorphous films were obtained by cosputtering from a composite target. Contact resistivities, ρc=1×10−7 and ρc=2.8×10−6, were measured on n+ and p+ silicon, respectively. These values remain constant after thermal treatment up to at least 500 °C. A barrier height, φBn=0.61 V, was measured on n-type silicon.Keywords
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