Low temperature phase diagram of the Ga1−xInxAsySb1−y system
- 1 December 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 79 (1-3) , 445-450
- https://doi.org/10.1016/0022-0248(86)90475-6
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- LPE growth of GaInAsSb/GaSb system: The importance of the sign of the lattice mismatchJournal of Crystal Growth, 1986
- Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength rangeJournal of Electronic Materials, 1985
- Thermodynamic analysis of the short-range clustering in III V solid solutionsRevue de Physique Appliquée, 1984
- Liquid-Phase Epitaxial Growth of InGaAsSb/GaSb and InGaAsSb/AlGaAsSb DH WafersJapanese Journal of Applied Physics, 1979
- A study of phase equilibria and heterojunctions in Ga–In–As–Sb quaternary systemCrystal Research and Technology, 1978
- The pseudoquaternary phase diagram of the Ga-In-As-Sb systemJournal of Crystal Growth, 1977
- Liquid phase epitaxial growth of InGaAsSb on (111)B InAsJournal of Crystal Growth, 1976
- Étude thermodynamique du système ternaire gallium-indium-antimoineJournal of Crystal Growth, 1976
- Calculation of ternary and quaternary III–V phase diagramsJournal of Crystal Growth, 1974
- Spectroscopic Analysis of Cohesive Energies and Heats of Formation of Tetrahedrally Coordinated SemiconductorsPhysical Review B, 1970