Punchthrough oscillator—new microwave solid-state source

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Abstract
The performances of silicon p-n-p punchthrough oscillators have been studied experimentally at X band in a coaxial cavity. A range of mechanical tuning of more than 3 GHz has been obtained. The oscillator performance at current densities up to about 200 A/cm has been related to the measured diode impedance. The wide-active-band, sensitive-electronic-tuning and low-noise properties of the punchthrough oscillator suggest promising applications as a microwave signal source, as a local oscillator, in f.m.-c.w. radar and in a.f.c.

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