Magnetoresistance of Heavily Doped n- and p-Type Germanium at 4.2°K
- 1 October 1963
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 18 (10) , 1374-1382
- https://doi.org/10.1143/jpsj.18.1374
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Magnetoresistance in Heavily Doped n-Type GermaniumJournal of the Physics Society Japan, 1962
- Localized Spins and Negative Magnetoresistance in the Impurity Conduction at High ConcentrationsJournal of the Physics Society Japan, 1962
- Galvanomagnetic Effects of a Heavily Doped Germanium CrystalJournal of the Physics Society Japan, 1956
- Transverse Hall and Magnetoresistance Effects in-Type GermaniumPhysical Review B, 1954
- New Galvanomagnetic EffectPhysical Review B, 1954
- Note on the Theory of Resistance of a Cubic Semiconductor in a Magnetic FieldPhysical Review B, 1950