Quantitative study of the effect of compensation on impurity conduction in heavily doped n-type germanium
- 30 April 1970
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 4, 183-191
- https://doi.org/10.1016/0022-3093(70)90040-2
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Electric Conduction in Phosphorus Doped Silicon at Low TemperaturesJournal of the Physics Society Japan, 1967
- Compensation Dependence of Impurity Conduction in Antimony-Doped GermaniumPhysical Review B, 1965
- Negative Magnetoresistance in the Metallic Impurity Conduction of n-Type GermaniumJournal of the Physics Society Japan, 1965
- Electrical Properties of Heavily Doped SiliconJournal of Applied Physics, 1963
- Impurity Conduction in Transmutation-Doped-Type GermaniumPhysical Review B, 1960
- Some Consequences of Thermal Neutron Capture in Silicon and GermaniumJournal of Applied Physics, 1959
- Low temperature impurity conduction in siliconJournal of Physics and Chemistry of Solids, 1959
- Resistivity and hall coefficient of antimony-doped germanium at low temperaturesJournal of Physics and Chemistry of Solids, 1958
- Fast-Neutron Bombardment of-Type GePhysical Review B, 1955
- Transmutation-Produced Germanium SemiconductorsPhysical Review B, 1950