Structure of GaAs-Ga 1− x Al x As superlattices grown by metal-organic chemical vapour deposition
- 10 November 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (23) , 988-990
- https://doi.org/10.1049/el:19830671
Abstract
A computer-controlled metal-organic chemical vapour deposition system employing a fast-switching gas manifold has been used to prepare GaAs-Ga1−xAlxAs superlattice structures. A combination of cross-sectional transmission electron microscopy and Auger and secondary ion mass spectrometry sputter profiling have allowed accurate measurements to be made of layer thickness and GaAs-Ga1−xAlxAs interface widths. Layers as thin as 15 Å have been observed and interface widths less than 20 Å measured.Keywords
This publication has 1 reference indexed in Scilit:
- Molecular Beam Epitaxy of Superlattices in Thin FilmsPublished by Elsevier ,1982