Pumped Schottky diodes with noise temperatures of less than 100 K at 115 GHz

11 October 1979

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 15 (21) , 689-690
https://doi.org/10.1049/el:19790490

Abstract

New Schottky-barrier diodes, with an epitaxial layer thickness of < 1000 Å and doping 2.5×10¹⁶ cm⁻³, yield a mixer noise temperature of 98 K at 115 GHz. The diodes have a diameter of 1.8 μm, and show repeatable performance. Measurements indicate negligible capacitance variation to at least +0.2 V. The noise temperature is competitive with values reported for Josephson and quasiparticle junctions.

Keywords

MIXER NOISE TEMPERATURE
SCHOTTKY BARRIER DIODES
CAPACITANCE VARIATIONS
DOPING
EPITAXIAL LAYER