InP/InGaAs double-HBT technology for high bit-ratecommunication circuits
- 16 January 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (2) , 149-151
- https://doi.org/10.1049/el:19970069
Abstract
A InP/InGaAs DHBT technology has been developed to meet the high speed requirements of circuits required in 20 Gbit/s optical communication links. High performance devices were achieved with a current gain over 100 and cutoff frequencies of > 50 GHz. The technology showed excellent behaviour in terms of yield and homogeneity. Over 20 Gbit/s digital ICs were realised: among them, a 20 Gbit/s external modulator driver, and a 32 Gbit/s 2:1 multiplexer.Keywords
This publication has 2 references indexed in Scilit:
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- InGaAs/InP double-heterojunction bipolar transistors with step graded InGaAsP between InGaAs base and InP collector grown by metalorganic chemical vapor depositionApplied Physics Letters, 1991