Impurity-band transport near the metal–insulator transition in ZnSe epilayers grown by molecular beam epitaxy
- 25 June 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (26) , 2669-2671
- https://doi.org/10.1063/1.102826
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Hall coefficient of insulatingn-type CdSePhysical Review B, 1989
- Electrical and optical characterization of molecular-beam epitaxy grown Ga-doped ZnSe.Journal of Vacuum Science & Technology B, 1989
- Evidence of a magnetic-field-induced insulator-metal-insulator transitionPhysical Review B, 1989
- New Theoretical Method for Strongly Correlated Random Systems and Application to Anderson-Localized States in Si:PPhysical Review Letters, 1988
- Magnetoresistivity of ZnSe in the Region of Hopping Conduction over Localized States in the Coulomb GapPhysica Status Solidi (b), 1987
- Hopping Conductivity and Electron Localization in Heavily Doped ZnSePhysica Status Solidi (b), 1984
- Negative Magnetoresistance in Zinc SelenidePhysica Status Solidi (b), 1981
- Formation and properties of the impurity band in n‐ZnSePhysica Status Solidi (b), 1977
- Impurity Conduction at Low ConcentrationsPhysical Review B, 1960
- Electrical Properties of Germanium Semiconductors at Low TemperaturesPhysical Review B, 1955