Observation of discrete current levels in metal-oxide-semiconductor field- effect transistors switched into weak inversion between 10 and 25 K
- 1 July 1982
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (1) , 62-64
- https://doi.org/10.1063/1.93329
Abstract
A discrete conductance effect in the transient response of an n‐channel metal‐oxide‐ semiconductor field‐effect transistor (MOSFET) switched from accumulation to weak surface inversion between 10 and 25 K is described. The discrete conductance appears as a set of equally spaced current levels superimposed on the steady state and transient currents. Transitions to lower discrete current levels are randomly distributed in time over the interval 0⩽t⩽τp(n), with τp(n) the maximum persistence time of the nth level and t = 0 the time when the MOSFET is switched into weak inversion. Up to six discrete levels have been observed. The general dependence of the current on biases and temperature is described.Keywords
This publication has 6 references indexed in Scilit:
- Transient response of n-channel metal-oxide-semiconductor field-effect transistors during turnon at 10–25 °KJournal of Applied Physics, 1982
- N-channel enhancement-mode MOSFET characteristics from 10 to 300 KIEEE Transactions on Electron Devices, 1981
- Simulation of impurity freezeout through numerical solution of Poisson's equation with application to MOS device behaviorIEEE Transactions on Electron Devices, 1980
- Time dependence of depletion region formation in phosphorus-doped silicon MOS devices at cryogenic temperaturesJournal of Applied Physics, 1979
- Subthreshold conduction in MOSFET'sIEEE Transactions on Electron Devices, 1978
- The theory of impurity conductionAdvances in Physics, 1961