Thermomigration processing of isolation grids in power structures
- 1 August 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 23 (8) , 818-823
- https://doi.org/10.1109/t-ed.1976.18492
Abstract
Planar isolation structures in power devices are produced in 10 min by the migration of patterned liquid alloy zones through silicon wafers in a temperature gradient. Relative to conventional all-diffused and mesa-structured power devices, this unique technique of thermomigration produces a high yield of devices with blocking characteristics closely approaching those predicted by theory.Keywords
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