Acceptors Produced in Germanium by Quenching from High Temperatures

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Abstract
Acceptors were produced in germanium single crystals by heating at high temperatures and then quenching very rapidly. Fuller et al. have measured the diffusion coefficient for these thermally produced acceptors and on the basis of their measurements the assumption is made here that the acceptor levels are due to Schottky defects. An expression is derived for the equilibrium density of ionized Schottky defects and on the basis of this theoretical expression and the experiments performed it is found that (1.49±0.12) ev must be supplied to the crystal to form a Schottky defect. An estimate of (2.0±0.1) ev is made for the "activation energy" of self-diffusion in germanium if diffusion occurs by a vacancy mechanism.

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