The effect of radiation on ion-implanted silicon detectors
- 1 February 1986
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 243 (1) , 93-97
- https://doi.org/10.1016/0168-9002(86)90826-0
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Energy-loss distributions for single particles and several particles in a thin silicon absorberNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
- Energy loss and energy straggling of protons and pions in the momentum range 0.7 to 115 GeV/cPhysical Review A, 1983
- The effect of radiation on the energy resolution of ion-implanted silicon detectorsNuclear Instruments and Methods in Physics Research, 1983