1.3 μm MQW semiconductor optical amplifiers with high gain and output power

17 January 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (2) , 165-166
https://doi.org/10.1049/el:19910106

Abstract

1.3 μm BH semiconductor laser amplifiers are described with MQW active layers. A single pass gain of 31dB is achieved with a 1000 μm long device. A 500 μm long device is realised with a spectral bandwidth of 110 nm and saturated output power of 25 mW.

Keywords

INGAASP
1.3 MICRON
BURIED HETEROSTRUCTURE LASERS
HIGH OUTPUT POWER
SINGLE PASS GAIN
MQW SEMICONDUCTOR OPTICAL AMPLIFIERS
BH SEMICONDUCTOR LASER AMPLIFIERS
31 DB
SPECTRAL BANDWIDTH
ACTIVE LAYERS
COMMUNICATIONS DIODE LASERS
25 MW
SATURATED OUTPUT POWER
500 MICRON
1000 MICRON
HIGH GAIN

This publication has 0 references indexed in Scilit: