Doping dependence of an n-type cuprate superconductor investigated by ARPES

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  • 9 January 2002
Abstract
We present an angle resolved photoemission (ARPES) study of the doping dependence of the n-type cuprate superconductor Nd_{2-x}Ce_xCuO_{4}, from the half-filled Mott-insulator to the T_c = 24K superconductor. In Nd_2CuO_4, we reveal for the first time the charge transfer band (CTB). As electrons are doped to the system, spectral weight forms near-E_F with a concomitant decrease in the intensity of the CTB. At low doping, the Fermi surface is an electron-pocket (with volume ~x) centered at (pi,0). Further doping leads to the creation of a new LDA-like Fermi surface (volume ~1+x) that stems from the connection of the (pi,0) states and from states that were at higher energy near (pi/2,pi/2) moving to E_F. These findings shed light on the Mott gap, its doping dependence, as well as the anomalous transport properties of the n-type cuprates.

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