Photoluminescence and space-charge distribution in a double-barrier diode under operation
- 9 October 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (15) , 1528-1530
- https://doi.org/10.1063/1.102253
Abstract
The low-temperature photoluminescence of a double-barrier diode under operation is studied. Its observation with exciting light above (as well as below) the quantum well absorption edge indicates that the tunneling of holes plays an important role. A new crossed transition identified to occur in the collector spacer layer shows a strong Stark shift with applied bias giving information on the potential distribution in the diode.Keywords
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