Parametric Amplification of Millimeter and Submillimeter Waves: Results, Potentials and Limitations

1 January 1970

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 104-110
https://doi.org/10.1109/gmtt.1970.1122779

Abstract

In the past parametric amplification was limited to microwave frequencies, as varactors did not reach high enough cutoff frequencies and low enough parasitic reactance. Recently Au-GsAs Schottky Barrier junctions with cutoff frequencies f/sub c/ beyond 1000 GHz mounted in Sharpless-wafers have opened the mm-wave region for this device.

Keywords

DIODES
RESONANT FREQUENCY
CUTOFF FREQUENCY
RESONANCE
VARACTORS
TUNABLE CIRCUITS AND DEVICES
BROADBAND AMPLIFIERS
CAPACITANCE
RLC CIRCUITS
DIELECTRIC CONSTANT

This publication has 2 references indexed in Scilit:

Millimeter frequency conversion using Au-n-type GaAs Schottky barrier epitaxial diodes with a novel contacting technique
Proceedings of the IEEE, 1965
Wafer-Type Millimeter Wave Rectifiers*
Bell System Technical Journal, 1956