A Gas‐Phase and Surface Kinetics Model for Silicon Epitaxial Growth with SiH2Cl2 in an RTCVD Reactor
- 1 January 1995
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 142 (1) , 259-266
- https://doi.org/10.1149/1.2043894
Abstract
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